文章基本信息

标题：The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering
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作者：M. Wiesner ; A. Trzaskowska ; B. Mroz 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2017
卷号：7
期号：1
页码：16449
DOI：10.1038/s41598-017-16313-5
语种：English
出版社：Springer Nature
摘要：It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.