文章基本信息

标题：Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement
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作者：Hang Qian ; Hao Tong ; Ming-Ze He 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：486
DOI：10.1038/s41598-017-18964-w
语种：English
出版社：Springer Nature
摘要：(GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to the memory industry by significantly increasing the storage density and inspiring the neuromorphic computing. This work focuses on the study of disorder-induced carrier localization which could result in multiple resistance levels of crystalline GST. To analyze the effect of carrier localization on multiple resistant levels, the intrinsic field effect (the change in surface conductance with an applied transverse electric field) of crystalline GST was measured, in which GST films were annealed at different temperatures. The field effect measurement is an important complement to conventional transport measurement techniques. The field effect mobility was acquired and showed temperature activation, a hallmark of carrier localization. Based on the relationship between field effect mobility and annealing temperature, we demonstrate that the annealing shifts the mobility edge towards the valence-band edge, delocalizing more carriers. The insight of carrier transport in multilevel crystalline states is of fundamental relevance for the development of multilevel phase change data storage.