文章基本信息

标题：Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors
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作者：Xianzhe Liu ; Hua Xu ; Honglong Ning 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：4160
DOI：10.1038/s41598-018-22602-4
语种：English
出版社：Springer Nature
摘要：interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.