文章基本信息

标题：Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
本地全文：下载
作者：L. Q. Zhang ; C. H. Zhang ; J. J. Li 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：4121
DOI：10.1038/s41598-018-22321-w
语种：English
出版社：Springer Nature
摘要：was produced with increasing ion fluence. Raman scattering spectra show that no N and Ga vacancies were produced, the free-carrier concentration decreases, while its mobility first increases and then exhibits a significant reduction with increasing ion fluence.