文章基本信息

标题：Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
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作者：Moonsang Lee ; Thi Kim Oanh Vu ; Kyoung Su Lee 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：7814
DOI：10.1038/s41598-018-26290-y
语种：English
出版社：Springer Nature
摘要：-related centres. Even though the a-plane GaN templates were grown by HVPE with high growth rates, the electronic deep trap characteristics are comparable to those of a-plane GaN layers of high crystal quality grown by MOCVD. This study prove that the growth of a-plane GaN templates on r-plane sapphire by HVPE is a promising method to obtain a-plane GaN layers efficiently and economically without the degradation of electrical characteristics.