文章基本信息

标题：On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
本地全文：下载
作者：Junlei He ; Meixin Feng ; Yaozong Zhong 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：7922
DOI：10.1038/s41598-018-26305-8
语种：English
出版社：Springer Nature
摘要：Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible with on-chip photonic integration. Etching as an alternative approach holds a great advantage in preparing cavity mirrors with no need of breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have a large roughness and etching damages, which would cause mirror loss due to optical scattering and carrier injection loss because of surface non-radiative recombination. A wet chemical polishing process of GaN sidewall facets formed by dry etching was studied in detail to remove the etching damages and smooth the vertical sidewalls. The wet chemical polishing technique combined with dry etching was successfully applied to the on-wafer fabrication of cavity mirrors, which enabled the realization of room temperature electrically injected InGaN-based laser diodes grown on Si.