文章基本信息

标题：Electric-field-controlled interface dipole modulation for Si-based memory devices
本地全文：下载
作者：Noriyuki Miyata
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：8486
DOI：10.1038/s41598-018-26692-y
语种：English
出版社：Springer Nature
摘要：and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.