文章基本信息

标题：High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
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作者：Jodi M. Iwata-Harms ; Guenole Jan ; Huanlong Liu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：14409
DOI：10.1038/s41598-018-32641-6
语种：English
出版社：Springer Nature
摘要：Spin-transfer-torque magnetic random access memory (STT-MRAM) is the most promising emerging non-volatile embedded memory. For most applications, a wide range of operating temperatures is required, for example -40 °C to +150 °C for automotive applications. This presents a challenge for STT-MRAM, because the magnetic anisotropy responsible for data retention decreases rapidly with temperature. In order to compensate for the loss of thermal stability at high temperature, the anisotropy of the devices must be increased. This in turn leads to larger write currents at lower temperatures, thus reducing the efficiency of the memory. Despite the importance of high-temperature performance of STT-MRAM for energy efficient design, thorough physical understanding of the key parameters driving its behavior is still lacking. Here we report on CoFeB free layers diluted with state-of-the-art non-magnetic metallic impurities. By varying the impurity material and concentration to modulate the magnetization, we demonstrate that the magnetization is the primary factor driving the temperature dependence of the anisotropy and thermal stability. We use this understanding to develop a simple model allowing for the prediction of thermal stability of STT-MRAM devices from blanket film properties, and find good agreement with direct measurements of patterned devices.