文章基本信息

标题：Growth Mechanisms and Electronic Properties of Vertically Aligned MoS2
本地全文：下载
作者：Chen Stern ; Shmuel Grinvald ; Moshe Kirshner 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：16480
DOI：10.1038/s41598-018-34222-z
语种：English
出版社：Springer Nature
摘要：p-n hetero-junction devices point to the existence of polarizable defects that impact applications of vertical transition-metal dichalcogenide materials.