文章基本信息

标题：Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
本地全文：下载
作者：Moonsang Lee ; Hyun Uk Lee ; Keun Man Song 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-6
DOI：10.1038/s41598-019-38664-x
出版社：Springer Nature
摘要：), effectively suppressing the reverse leakage current. We expect that this study will shed a light on the high reliability and carrier tunneling characteristics of the homoepitaxial InGaN/GaN blue LEDs produced from a Si substrate and also envision a promising future for their successful adoption by LED community via cost-effective homoepitaxial fabrication of LEDs.