期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2019
卷号：32
期号：1
页码：65-74
DOI：10.2298/FUEE1901065M
出版社：University of Niš
摘要：As reported in the open literature, there are many memristor models for the circuit-level simulations. Some of them are not particularly suitable for microwave circuit simulations. At RF/microwave frequencies, the memristor dynamics become an important issue for the transition process. In this paper we present a number of different SPICE memristor model groups. Each group is explained using representative models, which are analysed and compared from the microwave circuit analysis viewpoint. We consider the model behaviour at RF/microwave frequencies and the memristance setting issues. Results are compared and the best models are recommended.
关键词：Memristor models; microwave circuit; transition process
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