文章基本信息

标题：Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
作者：Dolićanin, Edin ; Fetahović, Irfan S.
期刊名称：Nuclear Technology and Radiation Protection
印刷版ISSN：1451-3994
出版年度：2018
卷号：33
期号：2
页码：208-216
DOI：10.2298/NTRP1802208D
出版社：VINČA Institute of Nuclear Sciences
摘要：The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007]
关键词：nanotechnology computer memory; optimization; redundancy; Monte Carlo simulation; radiation