文章基本信息

标题：Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing
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作者：Joshua C. Shank ; M. Brooks Tellekamp ; Matthew J. Wahila 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：12935
DOI：10.1038/s41598-018-30727-9
语种：English
出版社：Springer Nature
摘要：Metal-Nb₂O_5−x-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb₂O_5−x deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it results from the oxygen deficiencies in the amorphous Nb₂O_5−x. Rectification occurs due to a transition from thermionic emission to tunneling current and is present even in thick devices (>100 nm) due to charge trapping which controls the tunneling distance. The turn-on voltage is linearly proportional to the Schottky barrier height and, in contrast to traditional metal-insulator-metal diodes, is logarithmically proportional to the device thickness. Hysteresis in the I – V curve occurs due to the current limited filling of traps.