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  • 标题:Origin of extremely large magnetoresistance in the candidate type-II Weyl semimetal MoTe2−x
  • 本地全文:下载
  • 作者:Sangyun Lee ; Jaekyung Jang ; Sung-Il Kim
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2018
  • 卷号:8
  • 期号:1
  • 页码:13937
  • DOI:10.1038/s41598-018-32387-1
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:The recent observation of extremely large magnetoresistance (MR) in the transition-metal dichalcogenide MoTe2 has attracted considerable interest due to its potential technological applications as well as its relationship with novel electronic states predicted for a candidate type-II Weyl semimetal. In order to understand the origin of the MR, the electronic structure of MoTe2− x ( x = 0.08) is systematically tuned by application of pressure and probed via its Hall and longitudinal conductivities. With increasing pressure, a monoclinic-to-orthorhombic (1 T′ to Td) structural phase transition temperature ( T *) gradually decreases from 210 K at 1 bar to 58 K at 1.1 GPa, and there is no anomaly associated with the phase transition at 1.4 GPa, indicating that a T = 0 K quantum phase transition occurs at a critical pressure ( P c ) between 1.1 and 1.4 GPa. The large MR observed at 1 bar is suppressed with increasing pressure and is almost saturated at 100% for P > P c . The dependence on magnetic field of the Hall and longitudinal conductivities of MoTe2− x shows that a pair of electron and hole bands are important in the low-pressure Td phase, while another pair of electron and hole bands are additionally required in the high-pressure 1 T′ phase. The MR peaks at a characteristic hole-to-electron concentration ratio ( n c ) and is sharply suppressed when the ratio deviates from n c within the Td phase. These results establish the comprehensive temperature-pressure phase diagram of MoTe2− x and underscore that its MR originates from balanced electron-hole carrier concentrations.
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