文章基本信息

标题：Impact of Parameter Variations and Optimization on DG-PNIN Tunnel FET
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作者：Priya Jhalani ; Manisha Pattanaik
期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2014
卷号：5
期号：3
页码：47
DOI：10.5121/vlsic.2014.5305
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractivedevices for low power applications because of their low off-current and potential for smaller sub thresholdslope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnelfield effect transistor is investigated. In this work, variations in gate oxide material, source doping, channeldoping, drain doping, pocket doping and body thickness are studied and all these parameters are optimizedas performance boosters to give better current characteristics parameters. After optimization with all theseperformance boosters, the device has shown improved performance with increased on-current and reducedthreshold voltage and the Ion/Ioff ratio is > 106.
关键词：Tunnel Field Effect Transistor (TFET); Band to Band Tunneling (BTBT); DG-PIN TFET; DG-PNIN TFET;Ion/Ioff Ratio