文章基本信息

标题：Investigation of Quantum Dot Controlled Not Gate
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作者：Kumari Nidhipriya ; Upendra Prasad ; Amar Prakash sinha 等
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：9
页码：15939
DOI：10.15680/IJIRSET.2016.0509006
出版社：S&S Publications
摘要：this paper concept of Quantum-dot Controlled-NOT (QCNOT) gate has been introduced. The orbitalstates of electron wavefunction have been used for simulation of Controlled-NOT (CNOT) gate introduced here.Asymmetric coupled QDs (QDs of different size) fabricated from InAs dots on GaAs substrate have been considered.The outcomes obtained from the simulation were advocating realization of CNOT gate. The predominant parameter forthe implementation of CNOT gate is Quantum tunneling. Therefore, the prime element to be controlled is interdotseparation. The consequence of QD separation for desirable coupling had been employed. Controlled-Controlled NOT(CCN) gate (also known as Toffloi gate) having two control and one target qubit which is continuation of CNOT gate,is also studied. By using CCN gate it is possible to realize universal gate analogous to classical CMOS/TTL whichgives the truth table equivalent to NAND gate at certain condition.
关键词：CNOT; CCN; QD.