文章基本信息

标题：Circular test structures for determining the specific contact resistance of ohmic contacts
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作者：Holland, Anthony S. ; Pan, Yue ; Alnassar, Mohammad Saleh N. 等
期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2017
卷号：30
期号：3
页码：313-326
出版社：University of Niš
摘要：Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. Finite element modeling software NASTRAN can be used effectively for designing and modeling ohmic contact test structures and can be used to show that circular contacts are efficient in minimising error in determining specific contact resistance from such test structures. Full semiconductor modeling software is expensive and for ohmic contact investigations is not required when the approach used is to investigate test structures considering the ohmic interface as effectively resistive.
关键词：ohmic contact; specific contact resistance; contact resistance; test structure; circular transmission line model; transmission line model