文章基本信息

标题：Imprinting self-assembled patterns of lines at a semiconductor surface, using heat, light, or electrons
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作者：K. R. Harikumar ; Iain R. McNab ; John C. Polanyi 等
期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2011
卷号：108
期号：3
页码：950-955
DOI：10.1073/pnas.1006657107
语种：English
出版社：The National Academy of Sciences of the United States of America
摘要：The fabrication of nano devices at surfaces makes conflicting demands of mobility for self-assembly (SA) and immobility for permanence. The solution proposed in earlier work from this laboratory involved pattern formation in physisorbed molecules by SA, followed by localized reaction to chemically imprint the pattern substantially unchanged, a procedure we termed molecular-scale imprinting (MSI). Here, as proof of generality we extended this procedure, previously applied to imprinting circles on Si(111)-7 x 7, to SA lines of 1-chloropentane (CP) on Si(100)-2 x 1. The physisorbed lines consisted of pairs of CP that grew perpendicular to the Si dimer rows, as shown by scanning tunneling microscopy and ab initio theory. Chemical reaction of these lines with the surface was triggered in separate experiments by three different modes of energization: heat, electrons, or light. In all cases the CP molecules underwent MSI with a Si atom beneath so that the physisorbed lines of CP pairs were imprinted as chemisorbed lines of Cl pairs.
关键词：dynamics ; patterning ; self-assembly ; reaction