文章基本信息

标题：Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter
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作者：J. M. Blanes ; A. Garrigós ; R. Gutierrez 等
期刊名称：E3S Web of Conferences
印刷版ISSN：2267-1242
电子版ISSN：2267-1242
出版年度：2017
卷号：16
页码：1-5
DOI：10.1051/e3sconf/20171614006
出版社：EDP Sciences
摘要：This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter. This type of converters is usually used as Electronic Power Converters (EPC) for telecommunication satellites travelling-wave tube amplifiers (TWTAs). In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.