文章基本信息

标题：Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
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作者：Leilei Xu ; Jiafeng Feng ; Kangkang Zhao 等
期刊名称：Advances in Condensed Matter Physics
印刷版ISSN：1687-8108
电子版ISSN：1687-8124
出版年度：2017
卷号：2017
DOI：10.1155/2017/9042823
出版社：Hindawi Publishing Corporation
摘要：Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.