文章基本信息

标题：CMOSイメージセンサにおける低電圧駆動埋込みPDの解析 (埋込みPD構造による低リーク電流の検討)
本地全文：下载
作者：井上郁子 ; 山口鉄也 ; 野崎秀俊等
期刊名称：映像情報メディア学会誌
印刷版ISSN：1342-6907
电子版ISSN：1881-6908
出版年度：2001
卷号：55
期号：2
页码：257-263
DOI：10.3169/itej.55.257
出版社：The Institute of Image Information and Television Engineers
摘要：A CMOS image sensor with a very-low-leakage photodiode and a low-voltage buried photodiode has been developed that has sensitivity comparable to that of conventional CCD imagers. Photodiode leakage current caused by stress originates in the surface damage and in the dislocations and defects near the local oxidation of silicon. Use of a dislocation free stress-release process and of a buried photodiode reduced the damage and eliminates the stress. A 1/4-inch 330 K pixel CMOS image sensor using this buried photodiode structure and a sensor-specified process had a low dark current of 0.1 nA/cm² in 5.6 μm pixels. The buried photodiode can operate in complete charge-transfer mode at voltage as low as 3.3 V, thereby suppressing the image lag and FPN of the photodiode.
关键词：LOCOS;CMOSイメージセンサ;結晶欠陥;埋め込みPD;完全転送;残像