文章基本信息

标题：A Soft Error Study on Tri-gate based FinFET and Junctionless-FinFET 6T SRAM Cell – A Comparison
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作者：P Chitra ; S Ravi ; V N Ramakrishnan 等
期刊名称：TELKOMNIKA (Telecommunication Computing Electronics and Control)
印刷版ISSN：2302-9293
出版年度：2016
卷号：14
期号：4
页码：1299-1306
DOI：10.12928/telkomnika.v14i4.3458
语种：English
出版社：Universitas Ahmad Dahlan
摘要：When junction based semiconductor devices are scaled down to extreme lower dimensions, the formation of ultra-sharp junctions between source/drain and channel becomes complex since the doping concentration has to vary by several orders of magnitudes over a distance of a few nanometers. In addition, As CMOS device is scaling down significantly, the sensitivity of Integrated Circuits (ICs) to Single Event Upset (SEU) radiation increases. As soft errors emerge as reliability threat there is a significant interest lies both at device and circuit level for SEU hardness in memories. The critical dose observed in FinFET and Junctionless-FinFET (JLT) based 6T-SRAM is given by LET = 1.4 and 0.1 pC/µm. The simulation result analyzes electrical and SEU radiation parameters of FinFET and JLT based 6T-SRAM memory circuit.
其他摘要：When junction based semiconductor devices are scaled down to extreme lower dimensions, the formation of ultra-sharp junctions between source/drain and channel becomes complex since the doping concentration has to vary by several orders of magnitudes over a distance of a few nanometers. In addition, As CMOS device is scaling down significantly, the sensitivity of Integrated Circuits (ICs) to Single Event Upset (SEU) radiation increases. As soft errors emerge as reliability threat there is a significant interest lies both at device and circuit level for SEU hardness in memories. The critical dose observed in FinFET and Junctionless-FinFET (JLT) based 6T-SRAM is given by LET = 1.4 and 0.1 pC/µm. The simulation result analyzes electrical and SEU radiation parameters of FinFET and JLT based 6T-SRAM memory circuit.
关键词：FinFET 6T-SRAM;Junctionless 6T-SRAM;SEU Radiation;LET;HeavyIon;TCAD Simulation