文章基本信息

标题：LOW POWER IN NANO-SCALE CMOS MEMORY
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作者：LABONNAH F. RAHMAN ; F. B. ARITH ; M. I. B. IDRIS 等
期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2014
卷号：61
期号：2
出版社：Journal of Theoretical and Applied
摘要：Future technologies required nano-scale CMOS memory to be operating in low power consumption. The minimum operating voltage of the nano-scale CMOS played as a main factor to reduce the power consumption. Consequently, there are some limitations and obstacles to achieve the objective for several design, material and novel structural solutions, which are promising and reliable. In this research, the noticeable limits, possible annexes and applications of CMOS technologies in the nanometer regime is discussed. This paper mainly describes the limitations that conventional MOSFET is faced. In addition, the solutions to low power in nano-scale CMOS memory are presented. Therefore, analysis of the attainable performance and potential restrictions of CMOS technologies from the point of design, material and structural solution techniques are illustrated.
关键词：Nano-Scale; CMOS; Low Power; Memory