文章基本信息

标题：Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
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作者：Chen Wei Shih ; Albert Chin ; Chun Fu Lu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
DOI：10.1038/srep19023
出版社：Springer Nature
摘要：High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO₂ thickness for both active channel and source-drain regions, very high 147 cm²/Vs field-effect mobility, high I_ON/I_OFF of 2.3 × 10⁷, small 110 mV/dec sub-threshold slope, and a low V_D of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS₂ TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.