文章基本信息

标题：Modified Design to Enhance NBTI Recovery in Conventional SRAM Cell
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作者：S.Saravanan ; V.M.SenthilKumar ; Anitha 等
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
期号：MULTICON
页码：569
出版社：S&S Publications
摘要：Negative Bias Temperature Instability is an important lifetime reliability problem in microprocessors.SRAM-based structures within the processor are especially susceptible to NBTI since one of the PMOS devices in thememory cell always has an input of „0‟. Previously proposed recovery techniques for SRAM cells aim to balance thedegradation of the two PMOS devices by attempting to keep their inputs at logic „0‟ exactly 50% of the time. However,one of the devices is always in the negative bias condition at any given time. In this paper, we propose a techniquecalled Recovery Boosting that allows both PMOS devices in the memory cell to be put into the recovery mode byslightly modifying the design of conventional SRAM cells to verify its functionality and quantity area and powerconsumption.
关键词：SRAM; PMOS ; Negative Bias Temperature Instability..