期刊名称:International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN:2278-1323
出版年度:2012
卷号:1
期号:5
页码:227-230
出版社:Shri Pannalal Research Institute of Technolgy
摘要:The design of a Low Noise Amplifier (LNA) in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity).In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MOSFET(NMOS) for frequency 2.4 GHz. A single ended LNA has successfully designed with 18.8-19.2 dB forward gain and 1.986 dB noise figure, reverse isolation more than 28 dB at the frequency of 2.4 GHz. Keywords¡ª Low Noise Amplifier, Noise Figure, Gain, Stability.