文章基本信息

标题：Etching of Metallic & Dielectric Films in VLSI Technology
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作者：Rajeev Kumar ; Mandeep Singh Saini ; Dr.Mukesh Kumar 等
期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2012
卷号：1
期号：4
页码：194-195
出版社：Shri Pannalal Research Institute of Technolgy
摘要：In the present paper we discuss the isotropic etching of various films such as Aluminum, Titanium, Silicon dioxide& Silicon Nitride The second section of this paper contains anisotropic etching of Silicon using Silicon Nitride as a mask. Various types of etchant are available.The etch rate depends upon the pH, concentration and temperature in anisotropic etching. In isotropic etching etch rate depends upon concentration of the acidic medium.
关键词：Isotropic Etching; Anisotropic Etching; Orientation; Concentration; ; Temperature; Etch Rate