文章基本信息

标题：A Review on Silicon-Based Photodetectors
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作者：Salil Gupta ; Jyoti Kedia
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：2
页码：1245
DOI：10.15680/IJIRSET.2016.0502012
出版社：S&S Publications
摘要：Photodetectors are widely used in the optical communication at the transmission end of the photonic system which convert the incident light to current. So, it is needed to make photodetectors with high quantum efficiency for better detection of light and efficient working of the photonics system. Silicon based photodetectors are famous because of their low cost and it is easy to integrat e with optoelectronic devices. However there are materials like InGaAs, GaAs and Ge based detectors which have large responsivity and low dark current. It is a challenging task to design detectors with high performance for optical communication system, so there is need for balance between absorption efficiency, wavelength ranges and cost which can be overcome with a particular designing of the detector. There is a need to study about the various parameters of the photodetectors and improve these parameters by modelling of Si based photodetectors, their compatibility with different materials. This paper tends to review all the types of detectors which are Si based and analysis if their characteristics.
关键词：APD; PIN; photodetector; Silicon based; dark cu ; rrent; quantum efficiency; responsivity; waveguide