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  • 标题:A Proposed 0.4V Bulk Driven CMOS Inverter
  • 本地全文:下载
  • 作者:JasbirKaur ; Deepak Goel
  • 期刊名称:International Journal of Innovative Research in Science, Engineering and Technology
  • 印刷版ISSN:2347-6710
  • 电子版ISSN:2319-8753
  • 出版年度:2015
  • 卷号:4
  • 期号:12
  • 页码:12351
  • DOI:10.15680/IJIRSET.2015.0412126
  • 出版社:S&S Publications
  • 摘要:The last few decades, a great deal of attention has been paid to low-voltage (LV) low-power (LP)integrated circuits design since the power consumption has become a critical issue. The low power design can utilize asmaller size and lighter-weight battery. A lot of research has been done on several LV and LP complementary metaloxide- semiconductor (CMOS) integrated circuit design techniques. Among many techniques used for the design of LVLP integrated circuits, the Bulk-driven (BD) principle offers a promising route towards this design for many aspectsmainly the simplicity. In this paper the advantages of the proposed 0.4V BD-CMOS inverter compared to theconventional Gate-Driven (GD) CMOS inverter with 180nm technology in Cadence Virtuoso is presented.
  • 关键词:Bulk-Driven; CMOS Inverter; Low voltage; Low power; MOST.
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