文章基本信息

标题：Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
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作者：Kuldip Singh ; Ashok Chauhan ; Manish Mathew 等
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
卷号：4
期号：12
页码：12341
DOI：10.15680/IJIRSET.2015.0412124
出版社：S&S Publications
摘要：Vertical GaN blue light-emitting diodes (VLEDs) on thick electroplated copper substrate were realizedand characterized at wafer level. To realize vertical LED, the sapphire substrate from epitaxially grown LED structurewas removed using KrF excimer laser (λ= 248 nm). The Ti/Al/Ni/Au metal scheme was used n-contact. The currentvoltage(I-V) and electroluminescence (EL) were measured. The turn on voltage was ~ 2.8 V.
关键词：GaN; light-emitting diode (LED); laser lift-off (LLO); reactive ion etching (RIE).