文章基本信息

标题：EFFECT OF NITROGEN CONCENTRATION ON THE OPTICAL AND ELECTRICAL PERFORMANCE OF GA0.66IN0.34NYAS1-Y/GAAS QUANTUM WELL LASER DIODES
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作者：S. N. SUPARDAN ; M. FAIEZ ALI ; R. FAUZI 等
期刊名称：IMPACT : International Journal of Research in Applied, Natural and Social Sciences
印刷版ISSN：2347-4580
电子版ISSN：2321-8851
出版年度：2015
卷号：3
期号：11
页码：31-38
语种：English
出版社：IMPACT Journals
摘要：Design optimization of Ga0.66In0.34NyAs1-y quantum well (QW) for long wavelength semiconductor laser is conducted by using RSoft LaserMOD. The effect of different nitrogen (N) concentration ranging from 2.0 to 3.2 % with a stepped of 0.3 % in Ga0.66In0.34NyAs1-y QW system is investigated in term of its electrical and optical performances. It was found that the increment of N concentration up to 2.6% significantly elongating the emission of lasing wavelength (λ) up to 1.44 μm, elevating the output power (Pout) to 83.5 mW and reducing the threshold current density (Jth) to 431.25 A/cm2.