期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN:2320-9798
电子版ISSN:2320-9801
出版年度:2015
卷号:3
期号:9
DOI:10.15680/IJIRCCE.2015. 0309106
出版社:S&S Publications
摘要:The paper describes the thorough overview of DRAM . The review discusses basic introduction ofDRAM , DRAM architecture and its support circuitry. The paper also focuses on the study of four transistor DRAMcell , two transistor DRAM cell and one transistor DRAM cell . Read and write operations of different types of DRAMsare explained with help of control signal waveform . The comparison between two basic types of memories i.e. SRAMand DRAM is also discussed in the paper. This paper also aims to study various fields of application where DRAM canbe used
关键词:DRAM ;SRAM ; Precharge circuit ; Sense amplifier