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标题：Coincident-site lattice matching during van der Waals epitaxy
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作者：Jos E. Boschker ; Lauren A. Galves ; Timur Flissikowski 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep18079
出版社：Springer Nature
摘要：Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb₂Te₃ films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb₂Te₃ /graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate that depend on the size of the surface unit cell. This demonstrates that there is a significant, although relatively weak, interfacial interaction between the two materials. Lattice matching is thus relevant for vdW epitaxy with two 2D bonded materials and a fundamental design parameter for vdW heterostructures.