文章基本信息

标题：A Study of Two Stage Operational Transconductance Amplifier using Floating gate MOSFET
本地全文：下载
作者：Vijeta ; Dr. Subodh Wairya
期刊名称：International Journal of Engineering and Computer Science
印刷版ISSN：2319-7242
出版年度：2015
卷号：4
期号：10
页码：14643-14648
DOI：10.18535/ijecs/v4i10.17
出版社：IJECS
摘要：This paper presents a two stage operational transconductance amplifier realized using floating gate MOSFETs in differentialinputs. A configuration of two stage operational transconductance amplifier using floating gate MOSFET for low power and low voltageapplications is presented. Here we design a two stage operational transconductance amplifier using floating gate MOSFET in HSPICE180nm CMOS technology with the entire transistor in the saturation region. The simulated output transient response and frequencyresponse is shown for a supply voltage of 1V using Cosmos Scope in HSPICE. DC gain is 60dB, settling time 550ns and power consumption3.06pW.
关键词：OTA; Floating gate MOSFET