文章基本信息

标题：Low Voltage Complementary Metal Oxide Semiconductor Based Internet of Things Enable Energy Efficient RAM Design on 40nm and 65nm FPGA
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作者：Aditi Moudgil ; Kanika Garg ; Bishwajeet Pandey 等
期刊名称：International Journal of Smart Home
印刷版ISSN：1975-4094
出版年度：2015
卷号：9
期号：9
页码：37-50
DOI：10.14257/ijsh.2015.9.9.05
出版社：SERSC
摘要：In this work, we are making Energy Efficient Internet of Things (IoTs) Enable RAM. In order to make it energy efficient, we are using low voltage complementary metal oxide semiconductor (LVCMOS) Standards. We are using the 3 different members of LVCMOS IO standards family at different FGPA (virtex-5 and virtex-6) and searching the most energy efficient among them. We are inserting 128-bit IP address in RAM to make internet of things enable RAM. Finally, we are operating our IOTs Enable RAM with different operating frequency of I3, I5, I7, Moto-E and Moto-X.
关键词：RAM; Internet of Things; FPGA; LVDCI Thermal Aware Design; Energy ; Efficient Design