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标题：GaAs 위에 Sputter 증착된 텅스텐 박막의 열처리 조건에 따른 물리적 전기적 특성
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作者：Lee, Jong-Ram ; Lee, Chang-Seok ; Park, Hyeong-Mu 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1987
卷号：9
期号：3
页码：55-73
语种：Korean
出版社：Electronics and Telecommunications Research Institute
摘要：Schottky contacts of sputter-deposited tungsten film on Si-doped (100) GaAs have been interpreted by material parameters such as phase transformation of W- W, interdiffusion behavior of W, Ga, and As, and defect recovery kinetics by using AES, SEM,X-ray diffractometer, 4-point probe and I-V measurement. Diffusion depth at W/ GaAs interface during two stage activationannealing was decreased in comparison with the normal activation annealing, which causes the increase of barrier height at W/GaAs interface. The first rules of temperaturedependence of interdiffusivities of Ga, As, andW are as follows ; , exp(-3.77(eV. )/kT) exp(- 3.45(eV. /kT) exp (-3.09(eV. )/kT) The resistivity change of W film has been related to the defect concentration, impurity concentration, and phase composition ( Wand W). The oxygen atoms contaminated to W films during the deposition have a substential effect on the nucleation of W. The resistivity of W film is changed from to in the temperature range of to , which indicates the annihilation of sputtering induced imperfections during the annealing. The W W transformation occurs between and , corresponding to the resistivity change from to