文章基本信息

标题：Impurity Diffusion Enhancement of Interdiffusion in GalnAsP Heterostructures Lattice Matched to GaAs and InP
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作者：Park, Hyo-Hun ; Lee, Gyeong-Ho ; Nam, Eun-Su 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1989
卷号：11
期号：4
页码：84-97
语种：Korean
出版社：Electronics and Telecommunications Research Institute
摘要：The influence of Zn, Si and Te diffusion on the interdiffusion in and InP heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.