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标题：유기금속증착법에 의한 $IN_1-x$$Ga_x$$As_y$$P_1-y$/INP의 성장시 성장변수가 에피층의 전기적, 광학적 특성에 미치는 영향
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作者：Yu, Ji-Beom ; Kim, Jeong-Soo ; Chang, Dong-Hun 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1991
卷号：13
期号：4
页码：70-79
语种：Korean
出版社：Electronics and Telecommunications Research Institute
摘要：has a very wide range of applications in optoelectronic devices especially for optical communications because has the bandgap of the lowest dispersion ( ) and the lowest loss ( ) of the optical fiber by changing the composition. The quality of epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched /InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.