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标题：누설전류가 작은 $1.3\mum$ GaInAsP/InP 평면매립형 레이저 다이오드
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作者：Lee, Jung-Gi ; Cho, Ho-Sung ; Park, Kyung-Hyun 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1991
卷号：13
期号：4
页码：2-9
语种：Korean
出版社：Electronics and Telecommunications Research Institute
摘要：Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding and the reverse voltage for was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for .