文章基本信息

标题：Integration of 5-V CMOS and High-Voltage Devices for Display Driver Applications
本地全文：下载
作者：Kim, Jung-Dae ; Park, Mun-Yang ; Kang, Jin-Yeong 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1998
卷号：20
期号：1
页码：37-37
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in at a gate voltage of 5V.
关键词：항복전압;on-저항;RESURF기술;LDMOS기술;전력소자;전력집적화