文章基本信息

标题：Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-Grooves with (322) Facet Sidewalls by CHEMICAL Beam Epitaxy
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作者：Kim, Sung-Bock ; Ro, Jeong-Rae ; Lee, El-Hang 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1998
卷号：20
期号：2
页码：231-231
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 . Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about . Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.