文章基本信息

标题：Characteristics of P-channel SOI LDMOS Transistor with Tapered Field Oxides
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作者：Kim, Jong-Dae ; Kim, Sang-Gi ; Roh, Tae-Moon 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：1999
卷号：21
期号：3
页码：22-22
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURE (REduced SURface Field) LDMOS transistors has been optimized and improved by using a novel simulation and tapered TEOS field oxide on the drift region of the devices. With the similar breakdown voltage, at =-0.5V, the specific on-resistance of the LDMOS with the tapered field oxide is about , while that of the LDMOS with the conventional field oxide is about .