文章基本信息

标题：Dynamic Power Supply Current Testing for Open Defects in CMOS SRAMs
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作者：Yoon, Doe-Hyun ; Kim, Hong-Sik ; Kang, Sung-Ho 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2001
卷号：23
期号：2
页码：77-77
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.