文章基本信息

标题：Millimeter Wave MMIC Low Noise Amplifiers Using a 0.15 ${\mu}m$ Commercial pHEMT Process
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作者：Jang, Byung-Jun ; Yom, In-Bok ; Lee, Seong-Pal 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2002
卷号：24
期号：3
页码：190-190
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.