文章基本信息

标题：Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers
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作者：Kim, Cheon-Soo ; Kim, Sung-Do ; Park, Mun-Yang 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2003
卷号：25
期号：3
页码：195-195
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.