文章基本信息

标题：An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator
本地全文：下载
作者：Kim, Young-Gi ; Kim, Chang-Woo ; Kim, Seong-Il 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2005
卷号：27
期号：1
页码：75-75
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a die area.
关键词：MMIC;oscillator;X-band;HBT