文章基本信息

标题：Laser Process Proximity Correction for Improvement of Critical Dimension Linearity on a Photomask
本地全文：下载
作者：Park, Jong-Rak ; Kim, Hyun-Su ; Kim, Jin-Tae 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2005
卷号：27
期号：2
页码：188-188
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule-based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.
关键词：Laser lithography;photomask fabrication;critical dimension linearity;process proximity correction