文章基本信息

标题：Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications
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作者：Mheen, Bong-Ki ; Song, Young-Joo ; Kang, Jin-Young 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2005
卷号：27
期号：4
页码：439-439
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ) relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.
关键词：SiGe;strained-Si;strained-SiGe;hetero-structure MOSFET