文章基本信息

标题：DC and RF Characteristics of $0.15{\mu}m$ Power Metamorphic HEMTs
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作者：Shim, Jae-Yeob ; Yoon, Hyung-Sup ; Kang, Dong-Min 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2005
卷号：27
期号：6
页码：685-685
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：DC and RF characteristics of GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.
关键词：$0.15{\mu}m$;metamorphic HEMT;T-gate