文章基本信息

标题：A New Strained-Si Channel Power MOSFET for High Performance Applications
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作者：Cho, Young-Kyun ; Roh, Tae-Moon ; Kim, Jong-Dae 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2006
卷号：28
期号：2
页码：253-256
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a thick buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.
关键词：High voltage;power device;strained-Si;hot electron;breakdown voltage